Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode

Jun Rui Huang; Wei Chou Hsu; Yeong Jia Chen; Tzong Bin Wang; Huey Ing Chen; Wen Chau Liu

doi:10.1109/JSEN.2010.2084430

Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode

Jun Rui Huang, Wei Chou Hsu, Yeong Jia Chen, Tzong Bin Wang, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier height variations, adsorption heat, and transient responses for different hydrogen concentration are measured over wide temperature range. The Pd/GaN Schottky diode reveals a remarkable capability of hydrogen detection at high temperature and relatively wide operating temperature range under bipolarly applied voltages. Experimentally, extremely low hydrogen concentration for 14 ppm H₂ in air can be detected. A very high hydrogen detection sensitivity ratio of 12744 and a large Schottky barrier height variation Δφ_b of 253 meV are obtained when a 9970 ppm H₂ in air gas is introduced at 300 K. In addition, according to the van't Hoff equation, the hydrogen adsorption heat value of the studied device is calculated as -18.24 kJ mole^-1. Finally, considerably short response time is found in the studied device.

Original language	English
Article number	5594986
Pages (from-to)	1194-1200
Number of pages	7
Journal	IEEE Sensors Journal
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/JSEN.2010.2084430
Publication status	Published - 2011 Mar 25

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode",

abstract = "The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier height variations, adsorption heat, and transient responses for different hydrogen concentration are measured over wide temperature range. The Pd/GaN Schottky diode reveals a remarkable capability of hydrogen detection at high temperature and relatively wide operating temperature range under bipolarly applied voltages. Experimentally, extremely low hydrogen concentration for 14 ppm H2 in air can be detected. A very high hydrogen detection sensitivity ratio of 12744 and a large Schottky barrier height variation Δφb of 253 meV are obtained when a 9970 ppm H2 in air gas is introduced at 300 K. In addition, according to the van't Hoff equation, the hydrogen adsorption heat value of the studied device is calculated as -18.24 kJ mole-1. Finally, considerably short response time is found in the studied device.",

author = "Huang, {Jun Rui} and Hsu, {Wei Chou} and Chen, {Yeong Jia} and Wang, {Tzong Bin} and Chen, {Huey Ing} and Liu, {Wen Chau}",

year = "2011",

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doi = "10.1109/JSEN.2010.2084430",

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T1 - Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode

AU - Huang, Jun Rui

AU - Hsu, Wei Chou

AU - Chen, Yeong Jia

AU - Wang, Tzong Bin

AU - Chen, Huey Ing

AU - Liu, Wen Chau

PY - 2011/3/25

Y1 - 2011/3/25

N2 - The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier height variations, adsorption heat, and transient responses for different hydrogen concentration are measured over wide temperature range. The Pd/GaN Schottky diode reveals a remarkable capability of hydrogen detection at high temperature and relatively wide operating temperature range under bipolarly applied voltages. Experimentally, extremely low hydrogen concentration for 14 ppm H2 in air can be detected. A very high hydrogen detection sensitivity ratio of 12744 and a large Schottky barrier height variation Δφb of 253 meV are obtained when a 9970 ppm H2 in air gas is introduced at 300 K. In addition, according to the van't Hoff equation, the hydrogen adsorption heat value of the studied device is calculated as -18.24 kJ mole-1. Finally, considerably short response time is found in the studied device.

AB - The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier height variations, adsorption heat, and transient responses for different hydrogen concentration are measured over wide temperature range. The Pd/GaN Schottky diode reveals a remarkable capability of hydrogen detection at high temperature and relatively wide operating temperature range under bipolarly applied voltages. Experimentally, extremely low hydrogen concentration for 14 ppm H2 in air can be detected. A very high hydrogen detection sensitivity ratio of 12744 and a large Schottky barrier height variation Δφb of 253 meV are obtained when a 9970 ppm H2 in air gas is introduced at 300 K. In addition, according to the van't Hoff equation, the hydrogen adsorption heat value of the studied device is calculated as -18.24 kJ mole-1. Finally, considerably short response time is found in the studied device.

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