Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode

Jun Rui Huang, Wei Chou Hsu, Yeong Jia Chen, Tzong Bin Wang, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier height variations, adsorption heat, and transient responses for different hydrogen concentration are measured over wide temperature range. The Pd/GaN Schottky diode reveals a remarkable capability of hydrogen detection at high temperature and relatively wide operating temperature range under bipolarly applied voltages. Experimentally, extremely low hydrogen concentration for 14 ppm H2 in air can be detected. A very high hydrogen detection sensitivity ratio of 12744 and a large Schottky barrier height variation Δφb of 253 meV are obtained when a 9970 ppm H2 in air gas is introduced at 300 K. In addition, according to the van't Hoff equation, the hydrogen adsorption heat value of the studied device is calculated as -18.24 kJ mole-1. Finally, considerably short response time is found in the studied device.

Original languageEnglish
Article number5594986
Pages (from-to)1194-1200
Number of pages7
JournalIEEE Sensors Journal
Issue number5
Publication statusPublished - 2011 Mar 25

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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