Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes

Yan Ying Tsai, Kun Wei Lin, Chun Tsen Lu, Huey-Ing Chen, Hung Ming Chuang, Chun Yuan Chen, Chin Chuan Cheng, Wen-Chau Liu

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.

Original languageEnglish
Pages (from-to)2532-2539
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
Publication statusPublished - 2003 Dec 1

Fingerprint

Schottky diodes
aluminum gallium arsenides
Hydrogen
Diodes
hydrogen
transient response
Adsorption
metal oxide semiconductors
Transient analysis
Oxides
adsorption
Metals
Semiconductor materials
heat
semiconductor diodes
MOS devices
oxides
Current voltage characteristics
trucks
semiconductor devices

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Tsai, Yan Ying ; Lin, Kun Wei ; Lu, Chun Tsen ; Chen, Huey-Ing ; Chuang, Hung Ming ; Chen, Chun Yuan ; Cheng, Chin Chuan ; Liu, Wen-Chau. / Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes. In: IEEE Transactions on Electron Devices. 2003 ; Vol. 50, No. 12. pp. 2532-2539.
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Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes. / Tsai, Yan Ying; Lin, Kun Wei; Lu, Chun Tsen; Chen, Huey-Ing; Chuang, Hung Ming; Chen, Chun Yuan; Cheng, Chin Chuan; Liu, Wen-Chau.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 12, 01.12.2003, p. 2532-2539.

Research output: Contribution to journalArticle

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AU - Tsai, Yan Ying

AU - Lin, Kun Wei

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AU - Chen, Huey-Ing

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Cheng, Chin Chuan

AU - Liu, Wen-Chau

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