Abstract
The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 2532-2539 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 50 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2003 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
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Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes. / Tsai, Yan Ying; Lin, Kun Wei; Lu, Chun Tsen; Chen, Huey-Ing; Chuang, Hung Ming; Chen, Chun Yuan; Cheng, Chin Chuan; Liu, Wen-Chau.
In: IEEE Transactions on Electron Devices, Vol. 50, No. 12, 01.12.2003, p. 2532-2539.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes
AU - Tsai, Yan Ying
AU - Lin, Kun Wei
AU - Lu, Chun Tsen
AU - Chen, Huey-Ing
AU - Chuang, Hung Ming
AU - Chen, Chun Yuan
AU - Cheng, Chin Chuan
AU - Liu, Wen-Chau
PY - 2003/12/1
Y1 - 2003/12/1
N2 - The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.
AB - The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.
UR - http://www.scopus.com/inward/record.url?scp=1642421927&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1642421927&partnerID=8YFLogxK
U2 - 10.1109/TED.2003.819656
DO - 10.1109/TED.2003.819656
M3 - Article
AN - SCOPUS:1642421927
VL - 50
SP - 2532
EP - 2539
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
ER -