Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Ching Ting Lee; Qing Xuan Yu; Bang Tai Tang; Hsin Ying Lee; Fu Tsai Hwang

doi:10.1063/1.1376430

Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Ching Ting Lee, Qing Xuan Yu, Bang Tai Tang, Hsin Ying Lee, Fu Tsai Hwang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500°C, in hydrogen ambient. The measured specific contact resistance was 3 × 10^-4Ωcm². Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.

Original language	English
Pages (from-to)	3412-3414
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1376430
Publication status	Published - 2001 May 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1376430

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abstract = "The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500°C, in hydrogen ambient. The measured specific contact resistance was 3 × 10-4Ωcm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.",

author = "Lee, {Ching Ting} and Yu, {Qing Xuan} and Tang, {Bang Tai} and Lee, {Hsin Ying} and Hwang, {Fu Tsai}",

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AU - Lee, Ching Ting

AU - Yu, Qing Xuan

AU - Tang, Bang Tai

AU - Lee, Hsin Ying

AU - Hwang, Fu Tsai

PY - 2001/5/28

Y1 - 2001/5/28

N2 - The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500°C, in hydrogen ambient. The measured specific contact resistance was 3 × 10-4Ωcm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.

AB - The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500°C, in hydrogen ambient. The measured specific contact resistance was 3 × 10-4Ωcm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.

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Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Abstract

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