Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Ching Ting Lee, Qing Xuan Yu, Bang Tai Tang, Hsin Ying Lee, Fu Tsai Hwang

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500°C, in hydrogen ambient. The measured specific contact resistance was 3 × 10-4Ωcm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.

Original languageEnglish
Pages (from-to)3412-3414
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number22
DOIs
Publication statusPublished - 2001 May 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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