Investigation of InGaAs based pseudomorphic step-doped-channel field-effect transistor (SDCFET)

Physics & Astronomy

• transconductance 91%
• field effect transistors 65%
• electrical faults 54%
• threshold voltage 52%
• electric potential 30%
• high current 25%
• performance 24%
• direct current 21%
• high speed 20%
• current density 19%
• saturation 19%
• profiles 15%

Engineering & Materials Science

• Transconductance 100%
• Field effect transistors 89%
• Electric breakdown 62%
• Threshold voltage 61%
• High electron mobility transistors 32%
• Electric potential 28%
• Current density 26%
• Networks (circuits) 15%

Chemical Compounds

• Transconductance 96%
• Field Effect 82%
• Breakdown Voltage 62%
• Voltage 60%
• Dimension 15%
• Current Density 15%