Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

W. C. Chen; Y. K. Su; Wen-Kuei Chuang; H. C. Yu; B. Y. Chen; S. H. Hsu

doi:10.1088/0268-1242/23/3/035027

Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

W. C. Chen, Y. K. Su, Wen-Kuei Chuang, H. C. Yu, B. Y. Chen, S. H. Hsu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N₂, and Ar/O₂. The ITO film fabricated under the Ar/O₂ ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N₂ as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N₂ and Ar/O₂ as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO ₂ layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.

Original language	English
Article number	035027
Journal	Semiconductor Science and Technology
Volume	23
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/23/3/035027
Publication status	Published - 2008 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts",

abstract = "Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N2, and Ar/O2. The ITO film fabricated under the Ar/O2 ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N2 as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N2 and Ar/O2 as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO 2 layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.",

author = "Chen, {W. C.} and Su, {Y. K.} and Wen-Kuei Chuang and Yu, {H. C.} and Chen, {B. Y.} and Hsu, {S. H.}",

year = "2008",

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doi = "10.1088/0268-1242/23/3/035027",

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T1 - Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

AU - Chen, W. C.

AU - Su, Y. K.

AU - Chuang, Wen-Kuei

AU - Yu, H. C.

AU - Chen, B. Y.

AU - Hsu, S. H.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N2, and Ar/O2. The ITO film fabricated under the Ar/O2 ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N2 as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N2 and Ar/O2 as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO 2 layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.

AB - Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N2, and Ar/O2. The ITO film fabricated under the Ar/O2 ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N2 as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N2 and Ar/O2 as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO 2 layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.

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Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

Abstract

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