Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers

Hung Pin Shiao, Wei Lin, Jian Guang Chen, Yuan Kuang Tu, Ching Ting Lee

Research output: Contribution to conferencePaper

Abstract

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm-1

Original languageEnglish
DOIs
Publication statusPublished - 1994 Jan 1
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Shiao, H. P., Lin, W., Chen, J. G., Tu, Y. K., & Lee, C. T. (1994). Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771301