Abstract
Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm-1
Original language | English |
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DOIs | |
Publication status | Published - 1994 Jan 1 |
Event | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15 |
Conference
Conference | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 94-07-12 → 94-07-15 |
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering