Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor

W. C. Wang, S. Y. Cheng, W. L. Chang, H. J. Pan, Y. H. Shie, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The double-delta-doped heterojunction bipolar transistor (D3HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped sheets at emitter-base (E-B) and base-collector (B-C) heterojunction. Because of the use of delta-doped sheets, the potential spikes at E-B and B-C heterojunction are suppressed substantially. Thus a higher emitter injection efficiency (current gain) and a lower knee voltage are obtained. From experimental results, it is shown that the studied D3HBT device is a good candidate for high-speed and high-power circuit applications.

Original languageEnglish
Pages (from-to)630-633
Number of pages4
JournalSemiconductor Science and Technology
Issue number6
Publication statusPublished - 1998 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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