Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Jung Hui Tsai; Wen Shiung Lour; Chia Hong Huang; Ning Feng Dale; Yuan Hong Lee; Jhih Syuan Sheng; Wen Chau Liu

doi:10.1016/j.sse.2009.10.004

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Jung Hui Tsai, Wen Shiung Lour, Chia Hong Huang, Ning Feng Dale, Yuan Hong Lee, Jhih Syuan Sheng, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n⁺-InGaP/p-GaAs and p-GaAs/i-In_0.15Ga_0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.

Original language	English
Pages (from-to)	275-278
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2009.10.004
Publication status	Published - 2010 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor",

abstract = "In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n+-InGaP/p-GaAs and p-GaAs/i-In0.15Ga0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.",

author = "Tsai, {Jung Hui} and Lour, {Wen Shiung} and Huang, {Chia Hong} and Dale, {Ning Feng} and Lee, {Yuan Hong} and Sheng, {Jhih Syuan} and Liu, {Wen Chau}",

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doi = "10.1016/j.sse.2009.10.004",

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T1 - Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

AU - Tsai, Jung Hui

AU - Lour, Wen Shiung

AU - Huang, Chia Hong

AU - Dale, Ning Feng

AU - Lee, Yuan Hong

AU - Sheng, Jhih Syuan

AU - Liu, Wen Chau

PY - 2010/3/1

Y1 - 2010/3/1

N2 - In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n+-InGaP/p-GaAs and p-GaAs/i-In0.15Ga0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.

AB - In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n+-InGaP/p-GaAs and p-GaAs/i-In0.15Ga0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.

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Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Abstract

All Science Journal Classification (ASJC) codes

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