Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Jung Hui Tsai, Wen Shiung Lour, Chia Hong Huang, Ning Feng Dale, Yuan Hong Lee, Jhih Syuan Sheng, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n+-InGaP/p-GaAs and p-GaAs/i-In0.15Ga0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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