Investigation of InN nanorod-based egfet pH sensors fabricated on quartz substrate

S. X. Chen, S. P. Chang, S. J. Chang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The extended gate field effect transistor (EGFET) consists of an ion-sensitive electrode and a metal-oxide semiconductor field-effect-transistor (MOSFET) device. It can be used to measure ion content in an electrolytic solution. In this article, we present the work of our research group, which has successfully fabricated the first Indium Nitride (InN) nanorod as a sensitive membrane of the EGFET pH sensor. The InN nanorod-based EGFET pH sensor was fabricated on a quartz substrate using molecular beam epitaxy (MBE). The EGFET pH sensor with InN nanorods demonstrated improved sensing performance. The measured current and voltage sensitivities of the pH sensor were 26 μA/pH and 22.66 mV/pH, at pH values ranging from 4 to 10. This makes them suitable for a variety of applications such as pH sensors and biosensors.

Original languageEnglish
Pages (from-to)1505-1511
Number of pages7
JournalDigest Journal of Nanomaterials and Biostructures
Issue number4
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Structural Biology
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry


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