@inproceedings{fd9fae0f66384fca81153da8ed1d5249,
title = "Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure",
abstract = "An interesting InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure are demonstrated and studied. By use of the step-graded InAlGaAs/InP collector structure at the base-collector heterojunction, the current blocking effect is effectively eliminated. Experimentally, the studied device shows a relatively better common-emitter breakdown voltage and low output conductance though at high temperature. Also, the studied device shows a wider collector current density operation region which over 11 decades in magnitude of collector current density (10-6 to 105 A/cm2). Moreover, the studied device also shows the relatively weaker temperature dependence on the electron impact ionization α. Consequently, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.",
author = "Chen, {Tzu Pin} and Chen, {Wei Hsin} and Chu, {Kuei Yi} and Chen, {Li Yang} and Lee, {Chi Jhung} and Cheng, {Shiou Ying} and Tsai, {Jung Hui} and Liu, {Wen Chau}",
year = "2008",
doi = "10.1109/IWJT.2008.4540042",
language = "English",
isbn = "9781424417384",
series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
pages = "168--171",
booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",
}