Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)

Wei Chou Wang, Hsi Jen Pan, Kun Wei Lin, Kuo Hui Yu, Cheng Zu Wu, Lih Wen Laih, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a well-designed emitter improve the characteristics of the SE-RTBT. Common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thicknesses of 800 Å and 150 Å, respectively. Based on the specified structure, the lower offset voltage and saturation voltage (≤1.5 V) are obtained. Experimentally, the device with a 5-period superlattice and an emitter thickness of 800 Å provides higher dc performance and stable temperature-dependent characteristics.

Original languageEnglish
Pages (from-to)111-119
Number of pages9
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - 2001 Feb

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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