An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a well-designed emitter improve the characteristics of the SE-RTBT. Common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thicknesses of 800 Å and 150 Å, respectively. Based on the specified structure, the lower offset voltage and saturation voltage (≤1.5 V) are obtained. Experimentally, the device with a 5-period superlattice and an emitter thickness of 800 Å provides higher dc performance and stable temperature-dependent characteristics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering