Investigation of laser-assisted microcrystalline SiGe films deposited at low temperature

Li Wen Lai, Hsin Ying Lee, Jun Hung Cheng, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


SiGe films deposited by conventional plasma-enhanced chemical vapor deposition (PECVD) were compared with microcrystalline SiGe (μc-SiGe) films deposited at a low temperature using a laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD). In the LAPECVD system, a CO 2 laser was used to assist the pyrolytic decomposition of SiH 4 and GeH 4 reactant gases. The μc-SiGe structure was identified using electron diffraction patterns from high-resolution transmission electron microscopy images. Microcrystalline SiGe films were analyzed using various measurements.

Original languageEnglish
Pages (from-to)167-171
Number of pages5
JournalJournal of Electronic Materials
Issue number2
Publication statusPublished - 2008 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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