SiGe films deposited by conventional plasma-enhanced chemical vapor deposition (PECVD) were compared with microcrystalline SiGe (μc-SiGe) films deposited at a low temperature using a laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD). In the LAPECVD system, a CO 2 laser was used to assist the pyrolytic decomposition of SiH 4 and GeH 4 reactant gases. The μc-SiGe structure was identified using electron diffraction patterns from high-resolution transmission electron microscopy images. Microcrystalline SiGe films were analyzed using various measurements.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry