Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain

Shih Chang Tsai, San Lein Wu, Jone-Fang Chen, Bo Chin Wang, Po Chin Huang, Kai Shiang Tsai, Tsung Hsien Kao, Chih Wei Yang, Cheng Guo Chen, Kun Yuan Lo, Osbert Cheng, Yean Kuen Fang

Research output: Contribution to journalArticle

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Abstract

We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.

Original languageEnglish
Article number787132
JournalJournal of Nanomaterials
Volume2014
DOIs
Publication statusPublished - 2014 Jan 1

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Oxides
Telegraph
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Tsai, Shih Chang ; Wu, San Lein ; Chen, Jone-Fang ; Wang, Bo Chin ; Huang, Po Chin ; Tsai, Kai Shiang ; Kao, Tsung Hsien ; Yang, Chih Wei ; Chen, Cheng Guo ; Lo, Kun Yuan ; Cheng, Osbert ; Fang, Yean Kuen. / Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain. In: Journal of Nanomaterials. 2014 ; Vol. 2014.
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title = "Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain",
abstract = "We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.",
author = "Tsai, {Shih Chang} and Wu, {San Lein} and Jone-Fang Chen and Wang, {Bo Chin} and Huang, {Po Chin} and Tsai, {Kai Shiang} and Kao, {Tsung Hsien} and Yang, {Chih Wei} and Chen, {Cheng Guo} and Lo, {Kun Yuan} and Osbert Cheng and Fang, {Yean Kuen}",
year = "2014",
month = "1",
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Tsai, SC, Wu, SL, Chen, J-F, Wang, BC, Huang, PC, Tsai, KS, Kao, TH, Yang, CW, Chen, CG, Lo, KY, Cheng, O & Fang, YK 2014, 'Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain', Journal of Nanomaterials, vol. 2014, 787132. https://doi.org/10.1155/2014/787132

Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain. / Tsai, Shih Chang; Wu, San Lein; Chen, Jone-Fang; Wang, Bo Chin; Huang, Po Chin; Tsai, Kai Shiang; Kao, Tsung Hsien; Yang, Chih Wei; Chen, Cheng Guo; Lo, Kun Yuan; Cheng, Osbert; Fang, Yean Kuen.

In: Journal of Nanomaterials, Vol. 2014, 787132, 01.01.2014.

Research output: Contribution to journalArticle

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T1 - Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain

AU - Tsai, Shih Chang

AU - Wu, San Lein

AU - Chen, Jone-Fang

AU - Wang, Bo Chin

AU - Huang, Po Chin

AU - Tsai, Kai Shiang

AU - Kao, Tsung Hsien

AU - Yang, Chih Wei

AU - Chen, Cheng Guo

AU - Lo, Kun Yuan

AU - Cheng, Osbert

AU - Fang, Yean Kuen

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.

AB - We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.

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