We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.
|Journal||Journal of Nanomaterials|
|Publication status||Published - 2014|
All Science Journal Classification (ASJC) codes
- Materials Science(all)