Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

Tsung Hsien Kao, Shoou Jinn Chang, Yean Kuen Fang, Po Chin Huang, Bo Chin Wang, Chung Yi Wu, San Lein Wu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this study, the properties of dielectric traps by the impact of Fluorine (F) implantation on 1/f noise and the random telegraph noise (RTN) of high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were investigated. The incorporation of F has been identified as an effective method to passivate oxygen vacancies, defect sites, and reduce the gate leakage current in pMOSFETs. Compared with a control device, the F-implanted HK/MG devices show that the trap positions were closer to the SiO2 interfacial layer (IL)/Si channel. Furthermore, we found that F implantation could result in a smaller tunneling attenuation length (λ) and smaller slow oxide interface trap density (Nt).

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalSolid-State Electronics
Volume115
DOIs
Publication statusPublished - 2016 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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