Abstract
A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 6071-6072 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 10 |
| Publication status | Published - 1999 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition. / Wang, Na Fu; Houng, Mau Phon; Wang, Yeong Her.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 10, 01.10.1999, p. 6071-6072.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition
AU - Wang, Na Fu
AU - Houng, Mau Phon
AU - Wang, Yeong Her
PY - 1999/10/1
Y1 - 1999/10/1
N2 - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.
AB - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.
UR - http://www.scopus.com/inward/record.url?scp=0033312373&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033312373&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033312373
VL - 38
SP - 6071
EP - 6072
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -