Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.

Original languageEnglish
Pages (from-to)6071-6072
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number10
Publication statusPublished - 1999 Oct 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition'. Together they form a unique fingerprint.

Cite this