Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition

Na Fu Wang, Mau Phon Houng, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.

Original languageEnglish
Pages (from-to)6071-6072
Number of pages2
JournalJapanese Journal of Applied Physics
Volume38
Issue number10
DOIs
Publication statusPublished - 1999 Oct

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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