Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.

Original languageEnglish
Pages (from-to)6071-6072
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number10
Publication statusPublished - 1999 Oct 1

Fingerprint

Indium phosphide
indium phosphides
liquid phases
Silica
silicon dioxide
Liquids
Temperature
Surface charge
Charge density
Electric breakdown
Leakage currents
Electric properties
leakage
breakdown
electrical properties
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{8e3e92e3d5d1484c91ee4dc28d131cae,
title = "Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition",
abstract = "A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.",
author = "Wang, {Na Fu} and Houng, {Mau Phon} and Wang, {Yeong Her}",
year = "1999",
month = "10",
day = "1",
language = "English",
volume = "38",
pages = "6071--6072",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition

AU - Wang, Na Fu

AU - Houng, Mau Phon

AU - Wang, Yeong Her

PY - 1999/10/1

Y1 - 1999/10/1

N2 - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.

AB - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.

UR - http://www.scopus.com/inward/record.url?scp=0033312373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033312373&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033312373

VL - 38

SP - 6071

EP - 6072

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -