TY - JOUR
T1 - Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition
AU - Wang, Na Fu
AU - Houng, Mau Phon
AU - Wang, Yeong Her
PY - 1999/10
Y1 - 1999/10
N2 - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.
AB - A new low-temperature process (35-45 °C) for the deposition of high-quality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid phase deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable quality in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Qss/q = 3.1×1011 cm-2), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.
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U2 - 10.1143/jjap.38.6071
DO - 10.1143/jjap.38.6071
M3 - Article
AN - SCOPUS:0033312373
VL - 38
SP - 6071
EP - 6072
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 10
ER -