Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors

Chih Hung Yen, Kuan Po Lin, Kuo Hui Yu, Wen Lung Chang, Kun Wei Lin, Wen-Chau Liu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

Original languageEnglish
Pages (from-to)2615-2619
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
Publication statusPublished - 2000 Nov 1
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: 2000 May 302000 Jun 2

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mesas
High electron mobility transistors
high electron mobility transistors
Leakage currents
radio frequencies
direct current
Transconductance
leakage
Electric breakdown
Threshold voltage
transconductance
electrical faults
threshold voltage

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors",
abstract = "The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.",
author = "Yen, {Chih Hung} and Lin, {Kuan Po} and Yu, {Kuo Hui} and Chang, {Wen Lung} and Lin, {Kun Wei} and Wen-Chau Liu",
year = "2000",
month = "11",
day = "1",
doi = "10.1116/1.1322047",
language = "English",
volume = "18",
pages = "2615--2619",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
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TY - JOUR

T1 - Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors

AU - Yen, Chih Hung

AU - Lin, Kuan Po

AU - Yu, Kuo Hui

AU - Chang, Wen Lung

AU - Lin, Kun Wei

AU - Liu, Wen-Chau

PY - 2000/11/1

Y1 - 2000/11/1

N2 - The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

AB - The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

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U2 - 10.1116/1.1322047

DO - 10.1116/1.1322047

M3 - Conference article

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

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