Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors

Chih Hung Yen; Kuan Po Lin; Kuo Hui Yu; Wen Lung Chang; Kun Wei Lin; Wen Chau Liu

doi:10.1116/1.1322047

Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors

Chih Hung Yen, Kuan Po Lin, Kuo Hui Yu, Wen Lung Chang, Kun Wei Lin, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

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Abstract

The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

Original language	English
Pages (from-to)	2615-2619
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1322047
Publication status	Published - 2000 Nov
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: 2000 May 30 → 2000 Jun 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1322047

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Yen, C. H., Lin, K. P., Yu, K. H., Chang, W. L., Lin, K. W., & Liu, W. C. (2000). Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), 2615-2619. https://doi.org/10.1116/1.1322047

Yen, Chih Hung ; Lin, Kuan Po ; Yu, Kuo Hui et al. / Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 6. pp. 2615-2619.

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title = "Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors",

abstract = "The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.",

author = "Yen, {Chih Hung} and Lin, {Kuan Po} and Yu, {Kuo Hui} and Chang, {Wen Lung} and Lin, {Kun Wei} and Liu, {Wen Chau}",

year = "2000",

month = nov,

doi = "10.1116/1.1322047",

language = "English",

volume = "18",

pages = "2615--2619",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "6",

note = "44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication ; Conference date: 30-05-2000 Through 02-06-2000",

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Yen, CH, Lin, KP, Yu, KH, Chang, WL, Lin, KW & Liu, WC 2000, 'Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 6, pp. 2615-2619. https://doi.org/10.1116/1.1322047

Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors. / Yen, Chih Hung; Lin, Kuan Po; Yu, Kuo Hui et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6, 11.2000, p. 2615-2619.

Research output: Contribution to journal › Conference article › peer-review

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AU - Yen, Chih Hung

AU - Lin, Kuan Po

AU - Yu, Kuo Hui

AU - Chang, Wen Lung

AU - Lin, Kun Wei

AU - Liu, Wen Chau

PY - 2000/11

Y1 - 2000/11

N2 - The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

AB - The influences for mesa-sidewall effects of GaInP/InGaAs/GaInP pseudomorphic high electron mobility transistors are investigated. The device characteristics are degraded because of the mesa-sidewall effects of gate leakage current path. When the number of mesa sidewall is increased then the excessive gate leakage current, reduced breakdown voltage and transconductance and variation of threshold voltage is found to take place.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Y2 - 30 May 2000 through 2 June 2000

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Yen CH, Lin KP, Yu KH, Chang WL, Lin KW, Liu WC. Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 Nov;18(6):2615-2619. doi: 10.1116/1.1322047

Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga_0.51In_0.49P/In_0.15Ga_0.85As/Ga_0.51In_0.49P pseudomorphic high electron mobility transistors

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