Investigation of multi-mesa-channel-structured algan/gan moshemts with sio2 gate oxide layer

Jhang Jie Jian, Hsin Ying Lee, Edward Yi Chang, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review


In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi-mesa-channel could enhance gate control capabilities and reduce the self-heating effect in the channel, the performance of the MOSHEMTs could be obviously improved. The direct current performance metrics of the multi-mesa-channel-structured MOSHEMTs, such as a saturation drain-source current of 929 mA/mm, maximum extrinsic transconductance of 223 mS/mm, and on-resistance of 2.1 Ω-mm, were much better than those of the planar-structured MOSHEMTs. Moreover, the threshold voltage of the multi-mesa-channel-structured MOSHEMTs shifted toward positive voltage from −2.6 to −0.6 V, which was attributed to the better gate control capability. Moreover, the multi-mesa-channel-structured MOSHEMTs also had superior high-frequency and low-frequency noise performance. A low Hooge’s coefficient of 1.17 × 10−6 was obtained.

Original languageEnglish
Article number1494
Issue number12
Publication statusPublished - 2021 Dec

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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