Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3Gate Dielectric Layer

Jhang Jie Jian, Hsin Ying Lee, Edward Yi Chang, Niklas Rorsman, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm-1, threshold voltage of -0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 × 10-14 Hz-1, and Hooge's coefficient of 1.4 × 10-6. The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.

Original languageEnglish
Article number055017
JournalECS Journal of Solid State Science and Technology
Issue number5
Publication statusPublished - 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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