Investigation of n-type doping organic light-emitting diodes with a novel electron-injection material

Ming Chi Li, Po Ching Kao, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This letter demonstrated the OLED incorporating a novel n-doping transport layer composed of rubidium iodide (Rbl) doped into the electron transport layer as electron injection material. The device with a 15 wt.% Rbl-doped Alq3 achieves maximum luminance of to 19500 cd/A and also shows a efficiency of to 4.291 cd/A.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages790-791
Number of pages2
ISBN (Electronic)9781510827790
Publication statusPublished - 2014 Jan 1
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 2014 Dec 32014 Dec 5

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume2

Other

Other21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period14-12-0314-12-05

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Li, M. C., Kao, P. C., & Chu, S. Y. (2014). Investigation of n-type doping organic light-emitting diodes with a novel electron-injection material. In 21st International Display Workshops 2014, IDW 2014 (pp. 790-791). (21st International Display Workshops 2014, IDW 2014; Vol. 2). Society for Information Display.