Investigation of Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs Structures

Yeong Her Wang; Meng Hwang Liu; Mau Phon Houng

doi:10.1109/16.324581

Investigation of Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs Structures

Yeong Her Wang, Meng Hwang Liu, Mau Phon Houng

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Abstract

The negative differential resistance (NDR) phenom- ena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 A thick AlSb barrier and 240 A wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

Original language	English
Pages (from-to)	1734-1741
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/16.324581
Publication status	Published - 1994 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Investigation of Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs Structures",

abstract = "The negative differential resistance (NDR) phenom- ena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 A thick AlSb barrier and 240 A wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.",

author = "Wang, {Yeong Her} and Liu, {Meng Hwang} and Houng, {Mau Phon}",

note = "Funding Information: Manuscript received November 26, 1993; revised June 6, 1994. The review of this paper was arranged by Associate Editor S. Furukawa. This work was supported in part by the National Science Council of the Republic of China under contracts NSC-83-0417-E006-004. Y.-H. Wang, M. H. Liu, and M. P. Houng are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC. J. F. Chen is with the Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan, ROC. A. Y. Cho is with AT&T Bell Laboratories, Murray Hill, NJ 07974 USA. IEEE Log Number 9404172.",

year = "1994",

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doi = "10.1109/16.324581",

language = "English",

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pages = "1734--1741",

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AU - Houng, Mau Phon

N1 - Funding Information: Manuscript received November 26, 1993; revised June 6, 1994. The review of this paper was arranged by Associate Editor S. Furukawa. This work was supported in part by the National Science Council of the Republic of China under contracts NSC-83-0417-E006-004. Y.-H. Wang, M. H. Liu, and M. P. Houng are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC. J. F. Chen is with the Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan, ROC. A. Y. Cho is with AT&T Bell Laboratories, Murray Hill, NJ 07974 USA. IEEE Log Number 9404172.

PY - 1994/10

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N2 - The negative differential resistance (NDR) phenom- ena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 A thick AlSb barrier and 240 A wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

AB - The negative differential resistance (NDR) phenom- ena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 A thick AlSb barrier and 240 A wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

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Investigation of Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs Structures

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