Investigation of Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs Structures

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Abstract

The negative differential resistance (NDR) phenom- ena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 A thick AlSb barrier and 240 A wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

Original languageEnglish
Pages (from-to)1734-1741
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume41
Issue number10
DOIs
Publication statusPublished - 1994 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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