Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

Yen Chi Cheng; Sheng Po Chang; Shoou Jinn Chang

doi:10.1088/2053-1591/ab24a6

Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

Yen Chi Cheng, Sheng Po Chang, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (V_O) had the greatest impact. Through nitrogen doping during channel deposition, the V_O-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of V_O-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

Original language	English
Article number	106445
Journal	Materials Research Express
Volume	6
Issue number	10
DOIs	https://doi.org/10.1088/2053-1591/ab24a6
Publication status	Published - 2019 Sep 13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Polymers and Plastics
Metals and Alloys

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10.1088/2053-1591/ab24a6

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title = "Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs",

abstract = "In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.",

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T1 - Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

AU - Cheng, Yen Chi

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

PY - 2019/9/13

Y1 - 2019/9/13

N2 - In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

AB - In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

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Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

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