Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

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Abstract

In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

Original languageEnglish
Article number106445
JournalMaterials Research Express
Volume6
Issue number10
DOIs
Publication statusPublished - 2019 Sep 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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