To investigate the function and mechanism of oxidation, the surface of the chlorine-treated p-type GaN semiconductor was analyzed using x-ray photoelectron spectroscopy. The chlorinated surface treatment was performed by electrolyzing HCl chemical solution to generate HClO, which in turn could be used to oxidize the p-type GaN. The chlorinated surface treatment enhances the formation of GaOx on the GaN surface and removing GaOx layer from the surface thereafter leads to the creation of additional Ga vacancies. Consequently, more holes are generated as a result of the generated Ga vacancies. Therefore, a relatively higher Ohmic performance with a specific contact resistance of 6.1 × 10-6 Ω cm2 can be obtained for Ni/Au metal contact subsequently patterned on the chlorine-treated p-type GaN via the enhanced formation of GaOx.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)