TY - JOUR
T1 - Investigation of optical and electrical properties of ZnO thin films
AU - Lai, Li Wen
AU - Lee, Ching Ting
N1 - Funding Information:
The authors gratefully acknowledge the financial support from the National Science Council of Taiwan, ROC under contract no. NSC-95-2221-E006-315.
PY - 2008/8/15
Y1 - 2008/8/15
N2 - Zinc oxide (ZnO) thin films were deposited on Si substrates using various working pressures by magnetron sputter. The resistivity of the deposited ZnO films decreases with working pressure, and the resistivity of 4.3 × 10-3 Ω cm can be obtained without post annealing. According to the optical transmittance measurements, the optical transmittance above 90% in the wavelength longer than 430 nm and about 80% in the wavelength of 380 nm can be found. Using time-resolved photoluminescence measurement, the carrier lifetime increases with working pressure due to the reduction of nonradiative recombination rate. The reduction of nonradiative recombination rate is originated from the decrease of oxygen vacancies in the ZnO films deposited at a higher working pressure. This result is verified by the photoluminescence measurements. Besides, by increasing the working pressure, the absorption coefficient was decreased and the associated optical energy gap of ZnO thin films was increased.
AB - Zinc oxide (ZnO) thin films were deposited on Si substrates using various working pressures by magnetron sputter. The resistivity of the deposited ZnO films decreases with working pressure, and the resistivity of 4.3 × 10-3 Ω cm can be obtained without post annealing. According to the optical transmittance measurements, the optical transmittance above 90% in the wavelength longer than 430 nm and about 80% in the wavelength of 380 nm can be found. Using time-resolved photoluminescence measurement, the carrier lifetime increases with working pressure due to the reduction of nonradiative recombination rate. The reduction of nonradiative recombination rate is originated from the decrease of oxygen vacancies in the ZnO films deposited at a higher working pressure. This result is verified by the photoluminescence measurements. Besides, by increasing the working pressure, the absorption coefficient was decreased and the associated optical energy gap of ZnO thin films was increased.
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U2 - 10.1016/j.matchemphys.2008.02.029
DO - 10.1016/j.matchemphys.2008.02.029
M3 - Article
AN - SCOPUS:42949156205
SN - 0254-0584
VL - 110
SP - 393
EP - 396
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 2-3
ER -