Investigation of optical and electrical properties of ZnO thin films

Li Wen Lai, Ching Ting Lee

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

Zinc oxide (ZnO) thin films were deposited on Si substrates using various working pressures by magnetron sputter. The resistivity of the deposited ZnO films decreases with working pressure, and the resistivity of 4.3 × 10-3 Ω cm can be obtained without post annealing. According to the optical transmittance measurements, the optical transmittance above 90% in the wavelength longer than 430 nm and about 80% in the wavelength of 380 nm can be found. Using time-resolved photoluminescence measurement, the carrier lifetime increases with working pressure due to the reduction of nonradiative recombination rate. The reduction of nonradiative recombination rate is originated from the decrease of oxygen vacancies in the ZnO films deposited at a higher working pressure. This result is verified by the photoluminescence measurements. Besides, by increasing the working pressure, the absorption coefficient was decreased and the associated optical energy gap of ZnO thin films was increased.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalMaterials Chemistry and Physics
Volume110
Issue number2-3
DOIs
Publication statusPublished - 2008 Aug 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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