Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

Deng Xie, Zhi Ren Qiu, Devki N. Talwar, Yi Liu, Jen Hao Song, Jow Lay Huang, Ting Mei, Chee Wee Liu, Zhe Chuan Feng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.

Original languageEnglish
Pages (from-to)97-110
Number of pages14
JournalInternational Journal of Nanotechnology
Volume12
Issue number1-2
DOIs
Publication statusPublished - 2015

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Bioengineering

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