Investigation of photoelectrochemical-oxidized p-GaSb films

Hsin Ying Lee, Hung Lin Huang, Ching Ting Lee, Oleg Petrovich Pchelyakov, Nikolay Andreevich Pakhanov

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.

Original languageEnglish
Article number251604
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2012 Dec 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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