TY - GEN
T1 - Investigation of post-annealing indium tin oxide for future electro-optical device application
AU - Ho, Ching Yuan
AU - Tu, Tse Yi
AU - Wang, Chun Chieh
AU - Kang, Yuan
PY - 2011/12/6
Y1 - 2011/12/6
N2 - The nanostructure transformation associated with electro-optical properties via post-annealing of indium tin oxide film (ITO) is investigated by increasing post-annealing temperature in ambient oxygen. Although oxygen vacancy and activation Sn ions contribute to conductivity of ITO film, the oxygen vacancy inevitably reduces during posting annealing, but Sn-O related bonds are oppositely increased with IR absorption at 790 cm-1. Moreover, the sheet resistance of as-deposited ITO film 8.6 ;Ωsq increases to 47 Ω/sq as the annealing temperature rises to 500°C., the photoluminescence (PL) spectrum indicates that the oxygen vacancy plays a key role in dominating Rs in comparison with Sn-O bonds. The blue light transmittance of ITO film is slightly proportional to the annealing temperature due to phase crystallization enhancing band gap narrowing. Furthermore, as the annealing temperature rises beyond 500°C, the transmittance is compromised between the Burstein-Moss effect of high carrier concentration and nanostructure crystallinity. The oxygen deficient vacancy, instead of Sn-O related bonds, is a major contribution for ITO conductivity and transmittance.
AB - The nanostructure transformation associated with electro-optical properties via post-annealing of indium tin oxide film (ITO) is investigated by increasing post-annealing temperature in ambient oxygen. Although oxygen vacancy and activation Sn ions contribute to conductivity of ITO film, the oxygen vacancy inevitably reduces during posting annealing, but Sn-O related bonds are oppositely increased with IR absorption at 790 cm-1. Moreover, the sheet resistance of as-deposited ITO film 8.6 ;Ωsq increases to 47 Ω/sq as the annealing temperature rises to 500°C., the photoluminescence (PL) spectrum indicates that the oxygen vacancy plays a key role in dominating Rs in comparison with Sn-O bonds. The blue light transmittance of ITO film is slightly proportional to the annealing temperature due to phase crystallization enhancing band gap narrowing. Furthermore, as the annealing temperature rises beyond 500°C, the transmittance is compromised between the Burstein-Moss effect of high carrier concentration and nanostructure crystallinity. The oxygen deficient vacancy, instead of Sn-O related bonds, is a major contribution for ITO conductivity and transmittance.
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M3 - Conference contribution
AN - SCOPUS:82555185591
SN - 9781618040053
T3 - Recent Researches in Telecommunications, Informatics, Electronics and Signal Processing - TELE-INFO'11, MINO'11, SIP'11
SP - 154
EP - 158
BT - Recent Researches in Telecommunications, Informatics, Electronics and Signal Processing - TELE-INFO'11, MINO'11, SIP'11
T2 - 10th WSEAS International Conf. on Telecommunications and Informatics, TELE-INFO'11, 10th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, MINO'11, 10th WSEAS International Conference on Signal Processing, SIP'11
Y2 - 27 May 2011 through 29 May 2011
ER -