Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

Han Yin Liu, Wen Chia Ou, Wei Chou Hsu

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1 Citation (Scopus)


This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 °C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.

Original languageEnglish
Article number7523248
Pages (from-to)358-364
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Issue number5
Publication statusPublished - 2016 Sep

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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