Investigation of resonant interband tunneling structures using a three-band k · p model

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A three-band k · p model (CLH model) considering realistically the coupling effects among the conduction band, light-hole band and heavy-hole band is proposed to investigate further the characteristics of the resonant interband tunneling structures. The tunneling current densities for k{norm of matrix}-independent and -dependent cases are calculated for comparison. It is found that the inclusion of the k{norm of matrix} dependence is important in the discussion of the current-voltage (I-V) characteristics. The small peaks in low temperature I-V characteristics for GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling (BGIT) structure with a 120 Å wide InAs well is owing to the substantial coupling between conduction band and heavy-hole band on nonzero k{norm of matrix}. The effects coming from the k{norm of matrix} dependence also contribute to the rising of the first peak and the broading of the second peak in the low temperature I-V characteristics for BGIT structure with a 240 Å wide InAs well. A CLH model can interpret the particular phenomena in the I-V characteristics that cannot be explained by the two-band model, usually used in the investigation of the interband tunneling structures.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - 1995 Jan 1

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials


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