Investigation of silicon-germanium films deposited by plasma-enhanced chemical vapor deposition using laser assistance

Ching Ting Lee, Jun Hung Cheng, Yao Ming Chen, Tai Cheng Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To avoid the undesirable thermal treatment in high temperature, we proposed a new technique to deposit Si-Ge films on Si substrate in room temperature and without thermal post-annealing process. Since CO2 laser can be used as an energy source to induce gas-phase pyrolysis of SiH4 in a reactor, we used CO2 laser to assist the deposition of Si-Ge films on Si substrate in a conventional plasma-enhanced chemical deposition system (PECVD). An external CO2 laser beam with a wavelength of 10.6 μm was guided into the chamber of the conventional PECVD system. To deposit Si-Ge films on Si substrate without heating, argon-diluted SiH4 (4%) and GeH4 were used as reactant gas sources. In this study, the surface morphology of a-SiGe:H thin films grown with various laser power densities was examined using atomic force microscopy (AFM). The bonding configuration was analyzed by Raman spectroscopy and Fourier transmission infrared (FTIR) spectroscopy. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSiGe and Ge
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages197-206
Number of pages10
Edition7
ISBN (Electronic)1566775078
DOIs
Publication statusPublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number7
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06-10-2906-11-03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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