To avoid the undesirable thermal treatment in high temperature, we proposed a new technique to deposit Si-Ge films on Si substrate in room temperature and without thermal post-annealing process. Since CO2 laser can be used as an energy source to induce gas-phase pyrolysis of SiH4 in a reactor, we used CO2 laser to assist the deposition of Si-Ge films on Si substrate in a conventional plasma-enhanced chemical deposition system (PECVD). An external CO2 laser beam with a wavelength of 10.6 μm was guided into the chamber of the conventional PECVD system. To deposit Si-Ge films on Si substrate without heating, argon-diluted SiH4 (4%) and GeH4 were used as reactant gas sources. In this study, the surface morphology of a-SiGe:H thin films grown with various laser power densities was examined using atomic force microscopy (AFM). The bonding configuration was analyzed by Raman spectroscopy and Fourier transmission infrared (FTIR) spectroscopy. copyright The Electrochemical Society.
|Number of pages||10|
|Publication status||Published - 2006 Dec 1|
|Event||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
All Science Journal Classification (ASJC) codes