Investigation of silicon-germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasmaenhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.

Original languageEnglish
Title of host publication2008 5th International Conference on Group IV Photonics, GFP
Pages161-163
Number of pages3
DOIs
Publication statusPublished - 2008 Nov 21
Event2008 5th International Conference on Group IV Photonics, GFP - Sorrento, Italy
Duration: 2008 Sep 172008 Sep 19

Publication series

Name2008 5th International Conference on Group IV Photonics, GFP

Other

Other2008 5th International Conference on Group IV Photonics, GFP
CountryItaly
CitySorrento
Period08-09-1708-09-19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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