Abstract
A co-sputtering system was used to deposit silicon nanoclusters embedded in zinc oxide matrix (Si:ZnO) at low temperature without post-annealing. By adjusting the radio frequency power of the Si target during co-sputtering, Si:ZnO films with various crystallographic structures can be obtained. Silicon nanoclusters embedded in the zinc oxide matrix were examined using a high-resolution transmission electron microscope, x-ray diffractometer, and Fourier transformation infrared spectrometry. By comparing with photoluminescence spectra, we can clearly identify quantum confinement effect of silicon nanoclusters embedded in the ZnO matrix.
Original language | English |
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Pages (from-to) | 2506-2511 |
Number of pages | 6 |
Journal | Journal of Materials Research |
Volume | 23 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2008 Sep 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering