TY - JOUR
T1 - Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR
AU - Guan, Baolu
AU - Li, Pengtao
AU - Arafin, Shamsul
AU - Alaskar, Yazeed
AU - Wang, Kang L.
N1 - Funding Information:
We acknowledge the support of Natural Science Foundation of China under Award#: 60908012 and National Science Foundation of US under Award#: EFRI-1433541, Natural Science Foundation of Beijing under Award#:4143059 and Fondation of Beijing Municipal Education Commission under Grant No. KM201010005030.
Funding Information:
We acknowledge the support of Natural Science Foundation of China under Award#: 60908012 and National Science Foundation of US under Award#: EFRI-1433541, Natural Science Foundation of Beijing under Award#:4143059 and Fondation of Beijing Municipal Education Commission under Grant No. KM201010005030 .
Publisher Copyright:
© 2017 The Authors
PY - 2018/2
Y1 - 2018/2
N2 - An inter-cavty contact single mode 850 nm VCSEL was fabricated with a graphene assisted self-assembly curved dielectric bubble Bragg mirror for the first time. Taking the advantage of graphene's uniform low surface energy, the low cost dielectric bubble DBR (Si3N4/SiO2) was deposited on top of the graphene/half-VCSEL structure via van der Waals Force (vdWF) without using any additional spacing elements and sacrificial layer release-etch process. The continuous-wave operating VCSELs with an aperture diameter of 7 μm exhibit single-mode output power of more than 1 mW with a slope efficiency of 0.2 W/A. The sidemode suppression ratios are >40 dB. This novel modification into the lasers can also be applied to a variety of other optoelectronic devices, such as resonance photodetecter and super narrow linewidth VCSEL.
AB - An inter-cavty contact single mode 850 nm VCSEL was fabricated with a graphene assisted self-assembly curved dielectric bubble Bragg mirror for the first time. Taking the advantage of graphene's uniform low surface energy, the low cost dielectric bubble DBR (Si3N4/SiO2) was deposited on top of the graphene/half-VCSEL structure via van der Waals Force (vdWF) without using any additional spacing elements and sacrificial layer release-etch process. The continuous-wave operating VCSELs with an aperture diameter of 7 μm exhibit single-mode output power of more than 1 mW with a slope efficiency of 0.2 W/A. The sidemode suppression ratios are >40 dB. This novel modification into the lasers can also be applied to a variety of other optoelectronic devices, such as resonance photodetecter and super narrow linewidth VCSEL.
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U2 - 10.1016/j.photonics.2017.07.005
DO - 10.1016/j.photonics.2017.07.005
M3 - Article
AN - SCOPUS:85036650959
VL - 28
SP - 56
EP - 60
JO - Photonics and Nanostructures - Fundamentals and Applications
JF - Photonics and Nanostructures - Fundamentals and Applications
SN - 1569-4410
ER -