Investigation of single n-ZnO/i-ZnO/p-GaN-heterostructed nanorod ultraviolet photodetectors

Hsin Ying Lee, Hung Lin Huang, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The nanorods with the structure of n-ZnO/i-ZnO were deposited on the p-GaN layer using a vapor cooling condensation system. By using a conductive atomic force microscopy system, the rectifying diode-like behavior was observed from the single n-i-p heterostructural nanorod photodetectors. The associated dark leakage current measured from the single nanorod photodetectors operating at a reverse bias voltage of - 5 V was 4.9 pA. The photoresponsivity at 360 nm of the foregoing devices was determined to be 1481 A/W, while the efficiency-gain product measured was 5.1 × 103. The high internal gain was attributed to the oxygen-related hole-trap states induced by the native defects and dangling bonds existed on the nanorod sidewall surface.

Original languageEnglish
Article number5737763
Pages (from-to)706-708
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number11
Publication statusPublished - 2011 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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