Investigation of SiO2on AlGaAs prepared by liquid phase deposition

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Jian Jun Huang, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ∼ 1.7 × 1011 cm -2eV-1 for the LPD-SiO2 thickness of 29 nm.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages191-194
Number of pages4
DOIs
Publication statusPublished - 2010 Aug 30
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 2010 May 312010 Jun 4

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period10-05-3110-06-04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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