Investigation of slurry chemical corrosion on TaN barriers with plasma treatment

Chi Cheng Hung, Wen-Shi Lee, Ying Lang Wang

Research output: Contribution to journalArticle

Abstract

In this study, the corrosion between the copper (Cu) seed and the Ta Nx films with various Ar-sputtering amounts is investigated in acidic chemical mechanical polishing (CMP) slurries. The results show that the intrinsic corrosion of the Ta Nx films increases with increasing the Ar-sputtering amount because Ar sputtering causes the grain boundary of the Ta Nx film increase. The galvanic corrosion of the Ta Nx film increases with increasing the Ar-sputtering amount because the N-rich surface of the Ta Nx film is removed by Ar bombardment. The equivalent circuit, simulated using data from electrochemical analysis, reveals changes in resistance and capacitance elements of the Cu-Ta Nx electrochemical system. In the acidic CMP slurry, the charge-transfer resistance of the Ta Nx corrosion decreases with increasing the Ar-sputtering amount, whereas the resistance of a tantalum-oxide layer shows the opposite trend because decreasing the N content of the Ta Nx films enhances the oxidation rate of the Ta metals.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
Publication statusPublished - 2008 Sep 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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