Investigation of sputtered TaCx and WCx films as diffusion barriers for Cu metallization

Yi Tsai Hao Yi Tsai; Shui-Jinn Wang; S. C. Sun

Investigation of sputtered TaC_x and WC_x films as diffusion barriers for Cu metallization

Yi Tsai Hao Yi Tsai, Shui-Jinn Wang, S. C. Sun

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Physical and electrical properties as well as thermal stability of sputter-deposited TaC_x and WC_x films were investigated. The 60nm-thick TaC_x and WC_x film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaC_x layer was found around 700°C which is about 50∼100°C higher than that of WC_x layer. It was found that the failure of the TaC_x and WC_x barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.

Original language	English
Title of host publication	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages	267-270
Number of pages	4
Publication status	Published - 2001
Event	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan Duration: 2001 Apr 18 → 2001 Apr 20

Other

Other	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Country/Territory	Taiwan
City	Hsinchu
Period	01-04-18 → 01-04-20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@inproceedings{f05925259b034d78847ff32d445fc991,

title = "Investigation of sputtered TaCx and WCx films as diffusion barriers for Cu metallization",

abstract = "Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.",

author = "{Hao Yi Tsai}, {Yi Tsai} and Shui-Jinn Wang and Sun, {S. C.}",

year = "2001",

language = "English",

pages = "267--270",

booktitle = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

note = "2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings ; Conference date: 18-04-2001 Through 20-04-2001",

}

TY - GEN

T1 - Investigation of sputtered TaCx and WCx films as diffusion barriers for Cu metallization

AU - Hao Yi Tsai, Yi Tsai

AU - Wang, Shui-Jinn

AU - Sun, S. C.

PY - 2001

Y1 - 2001

N2 - Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.

AB - Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0034854324&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034854324&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034854324

SP - 267

EP - 270

BT - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

T2 - 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Y2 - 18 April 2001 through 20 April 2001

ER -

Investigation of sputtered TaC_x and WC_x films as diffusion barriers for Cu metallization

Abstract

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All Science Journal Classification (ASJC) codes

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