Investigation of sputtered TaCx and WCx films as diffusion barriers for Cu metallization

Yi Tsai Hao Yi Tsai, Shui-Jinn Wang, S. C. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.

Original languageEnglish
Title of host publicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages267-270
Number of pages4
Publication statusPublished - 2001
Event2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan
Duration: 2001 Apr 182001 Apr 20

Other

Other2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
CountryTaiwan
CityHsinchu
Period01-04-1801-04-20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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