Abstract
Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.
Original language | English |
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Title of host publication | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
Pages | 267-270 |
Number of pages | 4 |
Publication status | Published - 2001 |
Event | 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan Duration: 2001 Apr 18 → 2001 Apr 20 |
Other
Other | 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
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Country | Taiwan |
City | Hsinchu |
Period | 01-04-18 → 01-04-20 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering