Investigation of static corrosion between W Metals and TiNx Barriers in a W chemical-mechanical-polishing slurry

Chi Cheng Hung, Ying Lang Wang, Wen Hsi Lee, Shih Chieh Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In order to control the polishing qualities of tungsten (W) and titanium nitride (TiNx) films in W chemical-mechanical-polishing (WCMP) processes, the electrochemical behavior between the W and the TiNx films deposited at various N2 flow rates was examined in this study. Metrologies, including X-ray diffractrometry, Auger electron spectrometry, and scanning electron microscopy, were used to verify the physical properties of the TiNx films, while electrochemical analyses, including electrochemical impedance spectroscopy, potential dynamic curves, and potential difference measurements, were used to characterize the mechanism of galvanic corrosion between the W and the TiNx films deposited at various N2 flow rates. The results show that the N content of the TiNx films influences not only the physical properties of the TiNx films but also the chemical activity in the WCMP slurries. The equivalent circuit, including the charge-transfer resistance and the titanium-oxide resistance associated with tantalum-oxide capacitance, was built to characterize the mechanism of the galvanic corrosion between the W and the TiNx metals.

Original languageEnglish
Pages (from-to)H469-H473
JournalJournal of the Electrochemical Society
Volume155
Issue number7
DOIs
Publication statusPublished - 2008 Jun 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Investigation of static corrosion between W Metals and TiN<sub>x</sub> Barriers in a W chemical-mechanical-polishing slurry'. Together they form a unique fingerprint.

  • Cite this