In order to control the polishing qualities of tungsten (W) and titanium nitride (TiNx) films in W chemical-mechanical-polishing (WCMP) processes, the electrochemical behavior between the W and the TiNx films deposited at various N2 flow rates was examined in this study. Metrologies, including X-ray diffractrometry, Auger electron spectrometry, and scanning electron microscopy, were used to verify the physical properties of the TiNx films, while electrochemical analyses, including electrochemical impedance spectroscopy, potential dynamic curves, and potential difference measurements, were used to characterize the mechanism of galvanic corrosion between the W and the TiNx films deposited at various N2 flow rates. The results show that the N content of the TiNx films influences not only the physical properties of the TiNx films but also the chemical activity in the WCMP slurries. The equivalent circuit, including the charge-transfer resistance and the titanium-oxide resistance associated with tantalum-oxide capacitance, was built to characterize the mechanism of the galvanic corrosion between the W and the TiNx metals.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry