TY - JOUR
T1 - Investigation of step-doped channel heterostructure field-effect transistor
AU - Laih, L. W.
AU - Tsai, J. H.
AU - Wu, C. Z.
AU - Cheng, S. Y.
AU - Liu, W. C.
PY - 1997
Y1 - 1997
N2 - A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.
AB - A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.
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U2 - 10.1049/ip-cds:19971479
DO - 10.1049/ip-cds:19971479
M3 - Article
AN - SCOPUS:0031249554
SN - 1350-2409
VL - 144
SP - 309
EP - 312
JO - IEE Proceedings: Circuits, Devices and Systems
JF - IEE Proceedings: Circuits, Devices and Systems
IS - 5
ER -