Investigation of step-doped channel heterostructure field-effect transistor

L. W. Laih, J. H. Tsai, C. Z. Wu, S. Y. Cheng, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.

Original languageEnglish
Pages (from-to)309-312
Number of pages4
JournalIEE Proceedings: Circuits, Devices and Systems
Volume144
Issue number5
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Transconductance
High electron mobility transistors
Threshold voltage
Electric breakdown
Electric potential
Current density
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Laih, L. W. ; Tsai, J. H. ; Wu, C. Z. ; Cheng, S. Y. ; Liu, Wen-Chau. / Investigation of step-doped channel heterostructure field-effect transistor. In: IEE Proceedings: Circuits, Devices and Systems. 1997 ; Vol. 144, No. 5. pp. 309-312.
@article{bf16bbcfd9bb49e7b422b5770cbe4ea1,
title = "Investigation of step-doped channel heterostructure field-effect transistor",
abstract = "A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.",
author = "Laih, {L. W.} and Tsai, {J. H.} and Wu, {C. Z.} and Cheng, {S. Y.} and Wen-Chau Liu",
year = "1997",
month = "1",
day = "1",
doi = "10.1049/ip-cds:19971479",
language = "English",
volume = "144",
pages = "309--312",
journal = "IET Circuits, Devices and Systems",
issn = "1751-858X",
publisher = "Institution of Engineering and Technology",
number = "5",

}

Investigation of step-doped channel heterostructure field-effect transistor. / Laih, L. W.; Tsai, J. H.; Wu, C. Z.; Cheng, S. Y.; Liu, Wen-Chau.

In: IEE Proceedings: Circuits, Devices and Systems, Vol. 144, No. 5, 01.01.1997, p. 309-312.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of step-doped channel heterostructure field-effect transistor

AU - Laih, L. W.

AU - Tsai, J. H.

AU - Wu, C. Z.

AU - Cheng, S. Y.

AU - Liu, Wen-Chau

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.

AB - A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1 × 100μm2 gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232mS/mm, gate breakdown voltages of 15 and 12V, wide gate voltage swing of 3.3 and 2.6V with transconductance gm higher than 150mS/ mm, and threshold voltage -3.7 and -1.8V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0031249554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031249554&partnerID=8YFLogxK

U2 - 10.1049/ip-cds:19971479

DO - 10.1049/ip-cds:19971479

M3 - Article

VL - 144

SP - 309

EP - 312

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

SN - 1751-858X

IS - 5

ER -