Investigation of stress memorization process on low-frequency noise performance for strained Si n-type metal-oxide-semiconductor field-effect transistors

Cheng Wen Kuo, San Lein Wu, Hau Yu Lin, Yao Tsung Huang, Shoou Jinn Chang, De Gong Hong, Chung Yi Wu, Yao Chin Cheng, Osbert Cheng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The use of low-frequency (1/f ) noise to evaluate low-cost stress-memorization technique (SMT) induced-stress in n-type metal-oxide-semiconductor field-effect transistors has been investigated. As compared to device without SMT process, the comparable 1/f noise level obtained for strained Si devices with the low-cost SMT process indicates that adding the low-cost SMT process will not affect the Si/SiO2 interface quality. Moreover, through observing experiment result and Hooge's parameter αH, the mechanism of 1/f noise in the both devices can be properly interpreted by the carrier number fluctuations correlated mobility fluctuations (unified model).

Original languageEnglish
Article number04DC20
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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