Abstract
A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).
| Original language | English |
|---|---|
| Pages (from-to) | 1123-1128 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 34 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
}
Investigation of structure and properties of nanocrystalline silicon on various buffer layers. / Lin, C. Y.; Fang, Y. K.; Chen, S. F.; Lin, C. S.; Chou, T. H.; Hwang, S. B.; Hwang, J. S.; Lin, K. I.
In: Journal of Electronic Materials, Vol. 34, No. 8, 01.01.2005, p. 1123-1128.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of structure and properties of nanocrystalline silicon on various buffer layers
AU - Lin, C. Y.
AU - Fang, Y. K.
AU - Chen, S. F.
AU - Lin, C. S.
AU - Chou, T. H.
AU - Hwang, S. B.
AU - Hwang, J. S.
AU - Lin, K. I.
PY - 2005/1/1
Y1 - 2005/1/1
N2 - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).
AB - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).
UR - http://www.scopus.com/inward/record.url?scp=24144474673&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=24144474673&partnerID=8YFLogxK
U2 - 10.1007/s11664-005-0240-0
DO - 10.1007/s11664-005-0240-0
M3 - Article
AN - SCOPUS:24144474673
VL - 34
SP - 1123
EP - 1128
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 8
ER -