TY - JOUR
T1 - Investigation of structure and properties of nanocrystalline silicon on various buffer layers
AU - Lin, C. Y.
AU - Fang, Y. K.
AU - Chen, S. F.
AU - Lin, C. S.
AU - Chou, T. H.
AU - Hwang, S. B.
AU - Hwang, J. S.
AU - Lin, K. I.
N1 - Funding Information:
We are grateful for the financial support from the National Science Council under Contract No. NSC93-2215-E-006-005.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2005/8
Y1 - 2005/8
N2 - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).
AB - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).
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U2 - 10.1007/s11664-005-0240-0
DO - 10.1007/s11664-005-0240-0
M3 - Article
AN - SCOPUS:24144474673
VL - 34
SP - 1123
EP - 1128
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 8
ER -