Investigation of structure and properties of nanocrystalline silicon on various buffer layers

C. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, K. I. Lin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).

Original languageEnglish
Pages (from-to)1123-1128
Number of pages6
JournalJournal of Electronic Materials
Volume34
Issue number8
DOIs
Publication statusPublished - 2005 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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