Investigation of structure and properties of nanocrystalline silicon on various buffer layers

C. Y. Lin; Y. K. Fang; S. F. Chen; C. S. Lin; T. H. Chou; S. B. Hwang; J. S. Hwang; K. I. Lin

doi:10.1007/s11664-005-0240-0

Investigation of structure and properties of nanocrystalline silicon on various buffer layers

C. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, K. I. Lin

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm²/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).

Original language	English
Pages (from-to)	1123-1128
Number of pages	6
Journal	Journal of Electronic Materials
Volume	34
Issue number	8
DOIs	https://doi.org/10.1007/s11664-005-0240-0
Publication status	Published - 2005 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Lin, C. Y., Fang, Y. K., Chen, S. F., Lin, C. S., Chou, T. H., Hwang, S. B., Hwang, J. S., & Lin, K. I. (2005). Investigation of structure and properties of nanocrystalline silicon on various buffer layers. Journal of Electronic Materials, 34(8), 1123-1128. https://doi.org/10.1007/s11664-005-0240-0

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title = "Investigation of structure and properties of nanocrystalline silicon on various buffer layers",

abstract = "A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).",

author = "Lin, {C. Y.} and Fang, {Y. K.} and Chen, {S. F.} and Lin, {C. S.} and Chou, {T. H.} and Hwang, {S. B.} and Hwang, {J. S.} and Lin, {K. I.}",

year = "2005",

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T1 - Investigation of structure and properties of nanocrystalline silicon on various buffer layers

AU - Lin, C. Y.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, C. S.

AU - Chou, T. H.

AU - Hwang, S. B.

AU - Hwang, J. S.

AU - Lin, K. I.

PY - 2005/8

Y1 - 2005/8

N2 - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).

AB - A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy (SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG) size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers' surface roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of 84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200-220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111).

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