Investigation of substrate bias effects on the reactively sputtered ZrN diffusion barrier films

Jian Long Ruan, Ding Fwu Lii, Jen-Sue Chen, Jow-Lay Huang

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

ZrN diffusion barrier films were prepared by DC reactive magnetron sputtering under different negative substrate bias. The composition, microstructure, resistivity and diffusion barrier properties of ZrN films, with respect to substrate bias, were studied by means of X-ray diffraction, electron probe microanalyzer, Auger electron spectroscopy, and four point probe method. Results showed that the deposition rate and impurity oxygen content of ZrN films were substantially influenced by the resputtering effects due to the ion bombardment on the film surface. The competition between surface energy and strain energy made the preferred orientation of ZrN films change from (1 1 1) to (2 0 0) and then back to highly (1 1 1) preferred orientation as a function of substrate bias. The application of negative substrate bias could effectively decrease the electrical resistivity due to the decrease of impurity oxygen content and the densification of films, resulting from the moderate-energy ion irradiation. The biased ZrN films could successfully be used as a diffusion barrier layer, between Cu and SiO2, even up to the high temperature of 800 °C for 30 min.

Original languageEnglish
Pages (from-to)1999-2005
Number of pages7
JournalCeramics International
Volume35
Issue number5
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Diffusion barriers
Substrates
Ion bombardment
Impurities
Oxygen
Reactive sputtering
Auger electron spectroscopy
Strain energy
Deposition rates
Densification
Interfacial energy
Magnetron sputtering
X ray diffraction
Microstructure
Electrons
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "ZrN diffusion barrier films were prepared by DC reactive magnetron sputtering under different negative substrate bias. The composition, microstructure, resistivity and diffusion barrier properties of ZrN films, with respect to substrate bias, were studied by means of X-ray diffraction, electron probe microanalyzer, Auger electron spectroscopy, and four point probe method. Results showed that the deposition rate and impurity oxygen content of ZrN films were substantially influenced by the resputtering effects due to the ion bombardment on the film surface. The competition between surface energy and strain energy made the preferred orientation of ZrN films change from (1 1 1) to (2 0 0) and then back to highly (1 1 1) preferred orientation as a function of substrate bias. The application of negative substrate bias could effectively decrease the electrical resistivity due to the decrease of impurity oxygen content and the densification of films, resulting from the moderate-energy ion irradiation. The biased ZrN films could successfully be used as a diffusion barrier layer, between Cu and SiO2, even up to the high temperature of 800 °C for 30 min.",
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Investigation of substrate bias effects on the reactively sputtered ZrN diffusion barrier films. / Ruan, Jian Long; Lii, Ding Fwu; Chen, Jen-Sue; Huang, Jow-Lay.

In: Ceramics International, Vol. 35, No. 5, 01.07.2009, p. 1999-2005.

Research output: Contribution to journalArticle

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