Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

Yow Jon Lin; Ching Ting Lee

doi:10.1063/1.1332827

Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

Yow Jon Lin, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10^-5 Ω cm² for the Ti/Al nonalloyed ohmic contacts to (NH₄)₂S_x-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

Original language	English
Pages (from-to)	3986-3988
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	24
DOIs	https://doi.org/10.1063/1.1332827
Publication status	Published - 2000 Dec 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1332827

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abstract = "To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.",

author = "Lin, {Yow Jon} and Lee, {Ching Ting}",

year = "2000",

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AU - Lin, Yow Jon

AU - Lee, Ching Ting

PY - 2000/12/11

Y1 - 2000/12/11

N2 - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

AB - To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

Abstract

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