To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0 × 10-5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)