Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique

Han Yin Liu, Wei-Chou Hsu, Ching Sung Lee, Bo Yi Chou, Yi Bo Liao, Meng-Hsueh Chiang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2O2 oxidation technique. The gate dielectric quality is estimated by the breakdown electric field (EBD ) and low-frequency noise. The capacitance-voltage (C-V) hysteresis characteristics of MOS and Schottky diodes at 300/480 K are also studied. An appropriate thermal model is used to investigate the self-heating effect and calculate the effective channel temperature (Teff ). The dc performances of the present MOS-HEMT are improved at 300/480 K, as compared with a Schottky-barrier HEMT (SB-HEMT), including output current density, maximum extrinsic transconductance (gm,max), gate voltage swing, gate-drain leakage current (IGD), specific ON-resistance (RON), threeterminal OFF-state breakdown voltage (BVOFF), and subthreshold swing. Factors that cause IGD and BVOFF are analyzed by the temperature-dependent measurement. The passivation effect of the present MOS-HEMT is also confirmed by the surface leakage measurement. The devised MOS-HEMT demonstrates superior thermal stability to the reference SB-HEMT. The present-design is promising for high-temperature electronic applications.

Original languageEnglish
Article number6828723
Pages (from-to)2760-2766
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume61
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

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High electron mobility transistors
Hydrogen peroxide
Hydrogen Peroxide
Metals
Oxidation
Gate dielectrics
Passivation
Temperature
Transconductance
Electric potential
Electric breakdown
Leakage currents
Hysteresis
aluminum gallium nitride
Oxide semiconductors
Diodes
Thermodynamic stability
Current density
Capacitance
Electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{6d40f84dde2947389f19e196f93ee851,
title = "Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique",
abstract = "This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2O2 oxidation technique. The gate dielectric quality is estimated by the breakdown electric field (EBD ) and low-frequency noise. The capacitance-voltage (C-V) hysteresis characteristics of MOS and Schottky diodes at 300/480 K are also studied. An appropriate thermal model is used to investigate the self-heating effect and calculate the effective channel temperature (Teff ). The dc performances of the present MOS-HEMT are improved at 300/480 K, as compared with a Schottky-barrier HEMT (SB-HEMT), including output current density, maximum extrinsic transconductance (gm,max), gate voltage swing, gate-drain leakage current (IGD), specific ON-resistance (RON), threeterminal OFF-state breakdown voltage (BVOFF), and subthreshold swing. Factors that cause IGD and BVOFF are analyzed by the temperature-dependent measurement. The passivation effect of the present MOS-HEMT is also confirmed by the surface leakage measurement. The devised MOS-HEMT demonstrates superior thermal stability to the reference SB-HEMT. The present-design is promising for high-temperature electronic applications.",
author = "Liu, {Han Yin} and Wei-Chou Hsu and Lee, {Ching Sung} and Chou, {Bo Yi} and Liao, {Yi Bo} and Meng-Hsueh Chiang",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/TED.2014.2327123",
language = "English",
volume = "61",
pages = "2760--2766",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique. / Liu, Han Yin; Hsu, Wei-Chou; Lee, Ching Sung; Chou, Bo Yi; Liao, Yi Bo; Chiang, Meng-Hsueh.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 8, 6828723, 01.01.2014, p. 2760-2766.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

AU - Lee, Ching Sung

AU - Chou, Bo Yi

AU - Liao, Yi Bo

AU - Chiang, Meng-Hsueh

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2O2 oxidation technique. The gate dielectric quality is estimated by the breakdown electric field (EBD ) and low-frequency noise. The capacitance-voltage (C-V) hysteresis characteristics of MOS and Schottky diodes at 300/480 K are also studied. An appropriate thermal model is used to investigate the self-heating effect and calculate the effective channel temperature (Teff ). The dc performances of the present MOS-HEMT are improved at 300/480 K, as compared with a Schottky-barrier HEMT (SB-HEMT), including output current density, maximum extrinsic transconductance (gm,max), gate voltage swing, gate-drain leakage current (IGD), specific ON-resistance (RON), threeterminal OFF-state breakdown voltage (BVOFF), and subthreshold swing. Factors that cause IGD and BVOFF are analyzed by the temperature-dependent measurement. The passivation effect of the present MOS-HEMT is also confirmed by the surface leakage measurement. The devised MOS-HEMT demonstrates superior thermal stability to the reference SB-HEMT. The present-design is promising for high-temperature electronic applications.

AB - This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2O2 oxidation technique. The gate dielectric quality is estimated by the breakdown electric field (EBD ) and low-frequency noise. The capacitance-voltage (C-V) hysteresis characteristics of MOS and Schottky diodes at 300/480 K are also studied. An appropriate thermal model is used to investigate the self-heating effect and calculate the effective channel temperature (Teff ). The dc performances of the present MOS-HEMT are improved at 300/480 K, as compared with a Schottky-barrier HEMT (SB-HEMT), including output current density, maximum extrinsic transconductance (gm,max), gate voltage swing, gate-drain leakage current (IGD), specific ON-resistance (RON), threeterminal OFF-state breakdown voltage (BVOFF), and subthreshold swing. Factors that cause IGD and BVOFF are analyzed by the temperature-dependent measurement. The passivation effect of the present MOS-HEMT is also confirmed by the surface leakage measurement. The devised MOS-HEMT demonstrates superior thermal stability to the reference SB-HEMT. The present-design is promising for high-temperature electronic applications.

UR - http://www.scopus.com/inward/record.url?scp=84905018421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905018421&partnerID=8YFLogxK

U2 - 10.1109/TED.2014.2327123

DO - 10.1109/TED.2014.2327123

M3 - Article

AN - SCOPUS:84905018421

VL - 61

SP - 2760

EP - 2766

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

M1 - 6828723

ER -