Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique

Han Yin Liu, Wei-Chou Hsu, Ching Sung Lee, Bo Yi Chou, Yi Bo Liao, Meng-Hsueh Chiang

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2O2 oxidation technique. The gate dielectric quality is estimated by the breakdown electric field (EBD ) and low-frequency noise. The capacitance-voltage (C-V) hysteresis characteristics of MOS and Schottky diodes at 300/480 K are also studied. An appropriate thermal model is used to investigate the self-heating effect and calculate the effective channel temperature (Teff ). The dc performances of the present MOS-HEMT are improved at 300/480 K, as compared with a Schottky-barrier HEMT (SB-HEMT), including output current density, maximum extrinsic transconductance (gm,max), gate voltage swing, gate-drain leakage current (IGD), specific ON-resistance (RON), threeterminal OFF-state breakdown voltage (BVOFF), and subthreshold swing. Factors that cause IGD and BVOFF are analyzed by the temperature-dependent measurement. The passivation effect of the present MOS-HEMT is also confirmed by the surface leakage measurement. The devised MOS-HEMT demonstrates superior thermal stability to the reference SB-HEMT. The present-design is promising for high-temperature electronic applications.

Original languageEnglish
Article number6828723
Pages (from-to)2760-2766
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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