Investigation of temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel HFET

Wen Chau Liu; Kuo Hui Yu; Rong Chau Liu; Kun Wei Lin; Kuan Po Lin; Chih Hung Yen; Chin Chuan Cheng; Kong Beng Thei

doi:10.1109/16.974689

Investigation of temperature-dependent characteristics of an n ⁺-InGaAs/n-GaAs composite doped channel HFET

Wen Chau Liu, Kuo Hui Yu, Rong Chau Liu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Chin Chuan Cheng, Kong Beng Thei

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The temperature-dependent characteristics of an n ⁺-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n ⁺-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 × 100 μm ² device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V _th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.

Original language	English
Pages (from-to)	2677-2683
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	12
DOIs	https://doi.org/10.1109/16.974689
Publication status	Published - 2001 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{406c44a308264f4e80b823820b0f8508,

title = "Investigation of temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel HFET",

abstract = "The temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n +-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 × 100 μm 2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.",

author = "Liu, {Wen Chau} and Yu, {Kuo Hui} and Liu, {Rong Chau} and Lin, {Kun Wei} and Lin, {Kuan Po} and Yen, {Chih Hung} and Cheng, {Chin Chuan} and Thei, {Kong Beng}",

note = "Funding Information: Manuscript received March 19, 2001; revised July 17, 2001. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 89-2215-E006-028. The review of this paper was arranged by Editor K. M. Lau.",

year = "2001",

month = dec,

doi = "10.1109/16.974689",

language = "English",

volume = "48",

pages = "2677--2683",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Investigation of temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel HFET

AU - Liu, Wen Chau

AU - Yu, Kuo Hui

AU - Liu, Rong Chau

AU - Lin, Kun Wei

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Cheng, Chin Chuan

AU - Thei, Kong Beng

N1 - Funding Information: Manuscript received March 19, 2001; revised July 17, 2001. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 89-2215-E006-028. The review of this paper was arranged by Editor K. M. Lau.

PY - 2001/12

Y1 - 2001/12

N2 - The temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n +-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 × 100 μm 2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.

AB - The temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n +-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 × 100 μm 2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.

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Investigation of temperature-dependent characteristics of an n ⁺-InGaAs/n-GaAs composite doped channel HFET

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