The temperature-dependent characteristics of an n +-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n +-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 × 100 μm 2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of V th from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering