Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors

Hsi Jen Pan; Wei Chou Wang; Kong Beng Thei; Chin Chuan Cheng; Kuo Hui Yu; Kun Wei Lin; Cheng Zu Wu; Wen Chau Liu

doi:10.1088/0268-1242/15/12/301

Investigation of temperature-dependent performances of InP/In_0.53Ga_0.34Al_0.13As heterojunction bipolar transistors

Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Chin Chuan Cheng, Kuo Hui Yu, Kun Wei Lin, Cheng Zu Wu, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Temperature-dependent dc performances of lattice-matched InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. The variations of offset voltage and ideality factor at different temperatures have been analyzed. In addition, with decreasing temperature from 25 °C toward -196 °C, an irregular temperature behaviour of current gain is observed. At high current levels, the temperature-dependent current gain is mainly determined by the reduced reverse hole injection current. As the current level is lowered, the dominance of reverse hole injection current is correspondingly replaced by the recombination current.

Original language	English
Pages (from-to)	1101-1106
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	15
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/15/12/301
Publication status	Published - 2000 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/15/12/301

Cite this

@article{48aade884f1149648c2023d0861e8432,

title = "Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors",

abstract = "Temperature-dependent dc performances of lattice-matched InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. The variations of offset voltage and ideality factor at different temperatures have been analyzed. In addition, with decreasing temperature from 25 °C toward -196 °C, an irregular temperature behaviour of current gain is observed. At high current levels, the temperature-dependent current gain is mainly determined by the reduced reverse hole injection current. As the current level is lowered, the dominance of reverse hole injection current is correspondingly replaced by the recombination current.",

author = "Pan, {Hsi Jen} and Wang, {Wei Chou} and Thei, {Kong Beng} and Cheng, {Chin Chuan} and Yu, {Kuo Hui} and Lin, {Kun Wei} and Wu, {Cheng Zu} and Liu, {Wen Chau}",

year = "2000",

month = dec,

doi = "10.1088/0268-1242/15/12/301",

language = "English",

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pages = "1101--1106",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

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T1 - Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors

AU - Pan, Hsi Jen

AU - Wang, Wei Chou

AU - Thei, Kong Beng

AU - Cheng, Chin Chuan

AU - Yu, Kuo Hui

AU - Lin, Kun Wei

AU - Wu, Cheng Zu

AU - Liu, Wen Chau

PY - 2000/12

Y1 - 2000/12

N2 - Temperature-dependent dc performances of lattice-matched InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. The variations of offset voltage and ideality factor at different temperatures have been analyzed. In addition, with decreasing temperature from 25 °C toward -196 °C, an irregular temperature behaviour of current gain is observed. At high current levels, the temperature-dependent current gain is mainly determined by the reduced reverse hole injection current. As the current level is lowered, the dominance of reverse hole injection current is correspondingly replaced by the recombination current.

AB - Temperature-dependent dc performances of lattice-matched InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. The variations of offset voltage and ideality factor at different temperatures have been analyzed. In addition, with decreasing temperature from 25 °C toward -196 °C, an irregular temperature behaviour of current gain is observed. At high current levels, the temperature-dependent current gain is mainly determined by the reduced reverse hole injection current. As the current level is lowered, the dominance of reverse hole injection current is correspondingly replaced by the recombination current.

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DO - 10.1088/0268-1242/15/12/301

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SN - 0268-1242

VL - 15

SP - 1101

EP - 1106

JO - Semiconductor Science and Technology

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IS - 12

ER -

Investigation of temperature-dependent performances of InP/In_0.53Ga_0.34Al_0.13As heterojunction bipolar transistors

Abstract

All Science Journal Classification (ASJC) codes

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