TY - JOUR
T1 - Investigation of the crystallization mechanisms in indium molybdenum oxide films by vacuum annealing
AU - Sun, Shi Yao
AU - Huang, Jow Lay
AU - Lii, Ding Fwu
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC-93-2216-E-230-005.
PY - 2005/8
Y1 - 2005/8
N2 - The crystallization mechanisms for potentially high mobility molybdenum-indiumoxide (IMO) film were studied. The crystalline IMO films were deposited on unheated glass substrates via high-density plasma evaporation, and subsequent vacuum annealing was performed at 150, 200, and 250 °C for 30 min. The results of x-ray diffraction and x-ray photoelectron spectroscopy and electrical properties suggested that the room-temperature crystallization was induced from the highest compressive strain, caused by the charged [(MoIn •••Oi″)•] clusters and oxygen vacancies. The highest mobility of 75.8 cm2/Vs obtained at 250 °C was due to the charged In-Mo+6-O clusters and strain relaxation with (222)/(440) orientation change.
AB - The crystallization mechanisms for potentially high mobility molybdenum-indiumoxide (IMO) film were studied. The crystalline IMO films were deposited on unheated glass substrates via high-density plasma evaporation, and subsequent vacuum annealing was performed at 150, 200, and 250 °C for 30 min. The results of x-ray diffraction and x-ray photoelectron spectroscopy and electrical properties suggested that the room-temperature crystallization was induced from the highest compressive strain, caused by the charged [(MoIn •••Oi″)•] clusters and oxygen vacancies. The highest mobility of 75.8 cm2/Vs obtained at 250 °C was due to the charged In-Mo+6-O clusters and strain relaxation with (222)/(440) orientation change.
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U2 - 10.1557/JMR.2005.0248
DO - 10.1557/JMR.2005.0248
M3 - Article
AN - SCOPUS:28844465249
SN - 0884-2914
VL - 20
SP - 2030
EP - 2037
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 8
ER -