Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO 3 films

Cheng Liang Huang, Sih Yin Wang, Yuan Bin Chen, Bing Jing Li, Ying Hong Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Thin films of MgTiO 3 high-k dielectric have been prepared by RF magnetron sputtering deposition at various substrate temperatures. X-ray diffraction, atomic force microscopy were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichinometry. The electrical properties of MgTiO 3 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures, Pt/MgTiO 3/Pt/SiO 2/n-Si, were studied. It is shown that the MgTiO 3 (210 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼1.2 nF/um 2, a low leakage current of 1.51 × 10 -9 A/cm 2 at 5 V, low-voltage coefficients of capacitance, and good frequency dispersion properties. All of these indicate that the MgTiO 3 MIM capacitors are very suitable for use in Si analog circuit application or dynamic random access memory (DRAM) cell.

Original languageEnglish
Pages (from-to)935-939
Number of pages5
JournalCurrent Applied Physics
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 May 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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