Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO 3 films

Cheng-Liang Huang, Sih Yin Wang, Yuan Bin Chen, Bing-Jing Li, Ying Hong Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Thin films of MgTiO 3 high-k dielectric have been prepared by RF magnetron sputtering deposition at various substrate temperatures. X-ray diffraction, atomic force microscopy were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichinometry. The electrical properties of MgTiO 3 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures, Pt/MgTiO 3/Pt/SiO 2/n-Si, were studied. It is shown that the MgTiO 3 (210 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼1.2 nF/um 2, a low leakage current of 1.51 × 10 -9 A/cm 2 at 5 V, low-voltage coefficients of capacitance, and good frequency dispersion properties. All of these indicate that the MgTiO 3 MIM capacitors are very suitable for use in Si analog circuit application or dynamic random access memory (DRAM) cell.

Original languageEnglish
Pages (from-to)935-939
Number of pages5
JournalCurrent Applied Physics
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

Magnetron sputtering
Oxides
metal oxides
magnetron sputtering
Electric properties
Metals
electrical properties
metals
capacitors
Capacitors
insulators
Capacitance
capacitance
analog circuits
random access memory
Analog circuits
Substrates
Leakage currents
Temperature
low voltage

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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title = "Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO 3 films",
abstract = "Thin films of MgTiO 3 high-k dielectric have been prepared by RF magnetron sputtering deposition at various substrate temperatures. X-ray diffraction, atomic force microscopy were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichinometry. The electrical properties of MgTiO 3 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures, Pt/MgTiO 3/Pt/SiO 2/n-Si, were studied. It is shown that the MgTiO 3 (210 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼1.2 nF/um 2, a low leakage current of 1.51 × 10 -9 A/cm 2 at 5 V, low-voltage coefficients of capacitance, and good frequency dispersion properties. All of these indicate that the MgTiO 3 MIM capacitors are very suitable for use in Si analog circuit application or dynamic random access memory (DRAM) cell.",
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Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO 3 films. / Huang, Cheng-Liang; Wang, Sih Yin; Chen, Yuan Bin; Li, Bing-Jing; Lin, Ying Hong.

In: Current Applied Physics, Vol. 12, No. 3, 01.05.2012, p. 935-939.

Research output: Contribution to journalArticle

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AU - Wang, Sih Yin

AU - Chen, Yuan Bin

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AU - Lin, Ying Hong

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