Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO ₃ films

Engineering & Materials Science

• Magnetron sputtering 100%
• Electric properties 79%
• Oxides 64%
• Metals 48%
• Capacitors 29%
• Capacitance 21%
• High-k dielectric 19%
• Substrates 17%
• Atomic force microscopy 15%
• Temperature 15%
• Analog circuits 14%
• Leakage currents 13%
• X ray diffraction 12%
• Thin films 11%
• Data storage equipment 7%
• Electric potential 6%

Physics & Astronomy

• metal oxides 72%
• magnetron sputtering 62%
• electrical properties 55%
• metals 38%
• capacitors 32%
• insulators 27%
• capacitance 19%
• analog circuits 17%
• random access memory 14%
• low voltage 12%
• temperature 11%
• leakage 10%
• atomic force microscopy 9%
• coefficients 6%
• cells 6%
• diffraction 6%
• thin films 6%
• x rays 5%
• performance 5%

Chemical Compounds

• Magnetron Sputtering 86%
• Capacitor 76%
• Electrical Property 63%
• Liquid Film 36%
• Leakage Current 32%
• Dielectric Material 22%
• Atomic Force Microscopy 19%
• X-Ray Diffraction 12%