Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

Ming Jer Kao, Hir Ming Shieh, Wei Chou Hsu, Ticn Yih Lin, Yue Huei Wu, Rong Tay Hsu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.

Original languageEnglish
Pages (from-to)1181-1186
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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