The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10-5, 1×10-4 and 7.2×10-5 Ω cm2 were obtained.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Mar|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering