Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung, J. S. Bow, Y. C. Yu

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10-5, 1×10-4 and 7.2×10-5 Ω cm2 were obtained.

Original languageEnglish
Pages (from-to)729-732
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number2
Publication statusPublished - 2000 Mar

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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