Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

J. K. Sheu; Y. K. Su; G. C. Chi; M. J. Jou; C. C. Liu; C. M. Chang; W. C. Hung; J. S. Bow; Y. C. Yu

doi:10.1116/1.591267

Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung, J. S. Bow, Y. C. Yu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10^-5, 1×10^-4 and 7.2×10^-5 Ω cm² were obtained.

Original language	English
Pages (from-to)	729-732
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.591267
Publication status	Published - 2000 Mar

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces",

abstract = "The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10-5, 1×10-4 and 7.2×10-5 Ω cm2 were obtained.",

author = "Sheu, {J. K.} and Su, {Y. K.} and Chi, {G. C.} and Jou, {M. J.} and Liu, {C. C.} and Chang, {C. M.} and Hung, {W. C.} and Bow, {J. S.} and Yu, {Y. C.}",

year = "2000",

month = mar,

doi = "10.1116/1.591267",

language = "English",

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pages = "729--732",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

AU - Sheu, J. K.

AU - Su, Y. K.

AU - Chi, G. C.

AU - Jou, M. J.

AU - Liu, C. C.

AU - Chang, C. M.

AU - Hung, W. C.

AU - Bow, J. S.

AU - Yu, Y. C.

PY - 2000/3

Y1 - 2000/3

N2 - The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10-5, 1×10-4 and 7.2×10-5 Ω cm2 were obtained.

AB - The contact resistance of Ti/Al ohmic contacts bilayer on as-grown, etched, annealed n-GaN surfaces was investigated. The diffusion behaviors of the contacts at different alloying temperature were analyzed by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. The current-voltage characteristics of the nonalloyed Ti/Al contacts were measured. A specific contact resistance of around 9.8×10-5, 1×10-4 and 7.2×10-5 Ω cm2 were obtained.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

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